2pcs irf1407 mosfet

48.00

In stock

Description

IRF1407 is Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features:-

• Advanced process technology

• Ultra low on-resistance

• Dynamic dv/dt rating

• Fast switching

• Repetitive avalanche allowed up to Tjmax

Detailed Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 75V
Continuous Drain Current (Id) 130A
Drain-Source Resistance (Rds On) 7.8mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 250 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 330W

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