ORIGINAL IRLZ44N ohms 1/4 watt 5pcs

125.00

SKU: 000938 Category: Tags: , , , , , , ,

Description

The “IRLZ44N” is a specific type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in electronics and electrical circuits. The IRLZ44N is a popular and commonly used MOSFET due to its high current-carrying capability and low on-resistance. It is often used in switching applications where low power dissipation is desired.

As for the mentioned “ohms” and “1/4 watt,” here’s what they likely refer to:

1. **Ohms**: “Ohms” typically refers to the on-resistance (Rds(on)) of the IRLZ44N MOSFET. The on-resistance is a measure of how much the MOSFET resists the flow of current when it’s in the “on” state. The lower the Rds(on), the better, as it means less power is dissipated as heat when the MOSFET is conducting. The IRLZ44N typically has a low Rds(on value, usually specified in milliohms (mΩ) or ohms (Ω).

2. **1/4 Watt**: “1/4 watt” refers to the power dissipation or maximum power rating of the IRLZ44N. It means that the MOSFET can handle up to 1/4 watt of power without being damaged. Power dissipation in a MOSFET can occur in the form of heat when it is in the “on” state. For many applications, especially those involving switching, it’s important to choose a MOSFET that can handle the expected power dissipation to prevent overheating and damage.

In practice, the IRLZ44N is a logic-level MOSFET, which means it can be driven by low-voltage logic signals typically found in microcontroller or digital circuit applications. It has a low on-resistance, usually in the milliohm range, which makes it efficient for switching high currents with minimal power loss (heat generation). Its 1/4-watt power rating indicates its ability to handle a moderate amount of power dissipation.

When using the IRLZ44N in a circuit, make sure to check the datasheet for its specific electrical characteristics, including its on-resistance, voltage ratings, and current ratings, to ensure it is appropriate for your application and to avoid exceeding its power dissipation limits.

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